r.b.063099 ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) descri bed herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting t he factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1920A20 20 watts, 25 volts, class a 10 db gain personal 1930 ? 1990 mhz general description the 1920A20 is a common emitter transistor capable of providing 20 watts of class a, rf output power over the band 1930-1990 mhz. this transistor is specifically designed for personal communications base station linear amplifier applications. it includes input prematching and utilizes gold metalization and high value emitter ballasting to provide high reliability and supreme ruggedness. case outline 55sw style 2 common emitter absolute maximum ratings maximum power dissipation @ 25 c 190 watts maximum voltage and current collector to emitter voltage (bv ces ) 55 v collector to emitter voltage (lv ceo ) 27 v emitter to base voltage (bv ebo ) 3.5 v collector current (i c ) 14.0 amps maximum temperatures storage temperature -65 to +150 c operating junction temperature +200 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units p out power out f = 1930 - 1990 mhz 20 w p in power input v ce = 25 volts 2.2 w p g power gain icq = 3.0 amps 9.5 10 db imd3 intermodulation distortion pave= +37 dbm -38 dbc c collector efficiency at p1db 30 % vswr 1 load mismatch tolerance 3:1 functional characteristics @ 25 c bv ces collector to emitter breakdown ie = 50 ma 55 v lv ceo collector to emitter breakdown ic = 50 ma 25 v bv ebo emitter to base breakdown ie = 20ma 3.5 v i ces collector leakage current vce = 27 v 20 ma h fe dc ? current gain vce = 5v, ic = 1a, 30 100 jc thermal resistance tc = 25 o c0.92 c/w initial issue november 1998
typical performance 1920A20 power gain vs power output vce=25v, icq=3.0a @ 1990mhz 0 2 4 6 8 10 12 2.5 5 7.5 10 12.5 15 17.5 20 power output -watts power gain - db gain (db) power output vs power input vce=25v, icq=3.0a @ 1990mhz 0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 0.2 0.4 0.6 0.82 1.02 1.25 1.47 1.73 power input - watts power output- watts pout series input impedance vce=25v, icq=3.0a, pout= 20 w 1.4 1.6 1.8 2 2.2 2.4 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) rin (ohms) -2.5 -2 -1.5 -1 -0.5 0 xin (ohms) rin xin collector load impedance vce=25v, icq=3.0a, pout= 20 w 3 3.25 3.5 3.75 4 4.25 4.5 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) rcl (ohms) 0 0.5 1 1.5 2 xcl (ohms) rcl xcl broad band power gain & return loss pout= 20 w, vce = 25v, icq=3.0a 0 2 4 6 8 10 12 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) power gain (db) -25 -20 -15 -10 -5 0 return loss (db) gain (db) rl(-db) itermod dist vs collector current po=37 dbm, vce=25 @ 1990mhz -70 -60 -50 -40 -30 -20 -10 0 2 2.2 2.4 2.6 2.8 3 collector current- amps intermod dist- dbc 3rd order 5th order
|
